Dublin, May 28, 2021 /PRNewswire/ - The "Power Semiconductors: Markets, Materials, Technology" report from The Information Network has been added to ResearchAndMarkets.com's products.
This report analyzes and forecasts the global power semiconductor market by type, geographic region and application. The market by substrate type also focuses on new SiC and GaN materials and manufacturing. Power semiconductor devices are used as switches (to control power on or off) or rectifiers (to convert AC to DC) in power electronic equipment, such as variable frequency home appliances, electric vehicles, electric vehicle chargers, welding inverters, industrial robots, etc. . As of 2019, the global market size of power semiconductors was 41 billion U.S. dollars, accounting for about 10% of the global semiconductor market size. Power semiconductors can be divided into two parts: (1) power discrete devices and (2) power ICs. In terms of revenue, each part accounts for about 50% of the power semiconductor market. When the power semiconductor device is in the form of an integrated circuit, it is called a power IC, otherwise it is called a power discrete device. Power semiconductors are a global market worth 41 billion U.S. dollars. In this market, we are optimistic about IGBTs and MOSFETs because (1) the increasing energy efficiency requirements of various applications such as electric vehicles, industrial control, and household appliances have promoted continuous improvement. The growing market, (2) The huge domestic market and multiple Chinese brands in the home appliance, automotive and industrial sectors have driven the growing demand for Chinese suppliers. They hope to diversify the supply chain amid increasing trade tensions . The global IGBT leader generally covers a full range of applications from consumer electronics, automotive and industrial control to power generation, infrastructure and railways. The report analyzes each of these departments. The global MOSFET leader usually covers a full range of applications from consumer electronics, automobiles, computing, motor drivers, power supplies, telecommunications networks, electric vehicle charging, LED lighting to medical treatment. The report analyzes each of these departments. In recent years, the rapid growth of the power semiconductor market has been driven by the surge in computers and consumer electronics. These electronic products include desktop computers, notebook computers, netbooks, smartphones, flat panel displays and portable media players, which require complex power management. To improve power efficiency and extend battery life. Key topics covered: Chapter 1 introduces 1.1 IGBT chip structure evolution 1.2 IGBT chip miniaturization impact 1.3 SiC trench MOSFET has a lower resistance than DMOSFET 1.4 Planar and vertical (trench) MOSFET 1.5 FinFET schematic diagram 1.6 A schematic diagram MOSFET And Super Junction MOSFET 1.7 SiC U MOSFET Chapter 2 Application of Power Semiconductor 2.1 Forecast of Solar Power Generation 2.2 Full-Bridge IGBT Topology 2.3 Block Diagram of Microcontroller-based Inverter 2.4 Global Wind Turbine Shipment 2.5 The largest wind power capacity in each country 2.6 A simple diagram of a typical 30-50kw inverter 2.7 HEV traction drive system in the bill of materials. 2.8 The more complex PEEM in PHEV Figure 2.9 The conduction and switching losses of the inverter 2.10 The unit price trend of power semiconductors 2.11 The system and component costs of wide bandgap semiconductors 2.12 Vertical and horizontal HEMT 2.13 GaN horizontal and GaN vertical HEMT in electric vehicles 2.14 LED business and application market drivers 2.15 SSL and. Classical technology 2.16 LED performance comparison traditional light source 2.17 energy production and use comparison 2.18 typical LED drive circuit 2.19 LED and LED driver integration using TSV 2.20 simple power MOSFET motor controller 2.21 basic working principle of the inverter 2.1 solar power prediction 2.2 full Bridge IGBT topology 2.3 Microcontroller block diagram based on inverter 2.4 Global wind turbine shipments 2.5 Top wind power capacity by country/region 2.6 Bill of materials for typical 30-50kw inverter 2.7 Simple diagram of HEV traction drive system. 2.8 The more complex PEEM in plug-in hybrid electric vehicles (PHEV) Figure 2.9 Conduction and switching losses of inverters 2.10 Unit price trends of power semiconductors 2.11 System and component costs of wide bandgap semiconductors Chapter 3 Market analysis 3.1 Power semiconductors Position in the semiconductor market 3.2 Growth potential of IGBT and power MOSFET 3.3 IGBT market 3.3.1 IGBT technology trend 3.3.2 IGBT TAM 3.3.3 IGBT market growth by application 3.3.3.1 Automotive 3.3.3.2 Power generation and grid 3.3.3.3 Consumption Electronics 3.3.3. Industrial Control 3.3.3.5 Railway/Train 3.3.3.6 Electric Vehicle Charging System 3.3.4 IGBT Competition Landscape 3.3.4.1 Global and Chinese Market Share 3.3.4.2 IGBT Business Model 3.3.4.3 Between China and Global Players Technology gap 3.4 MOSFET TAM 3.4.1 MOSFET TAM methodology 3.4.2 MOSFET application market growth 3.4.2.1 Automotive 3.4.2.2 EV charging 3.4.2.3 Industrial and medical 3.4.2.4 Consumption 3.4.2.5 Telecommunications network 3.4.3.6 Computer 3.4.4 MOSFET Competitive landscape 3.4.4.1 Global and Chinese market shares 3.4.4.2 Technology/product gap between Chinese suppliers and global peers 3.5 Emerging end application markets 3.5.1 Electric vehicles 3.5.2 5G infrastructure 3.4 Wide band gap power semiconductor market Chapter 4 Next generation Power semiconductors 4.1 Expectations for overcoming the limitations of silicon 4.2 Expectations for SiC and GaN as next-generation substrates 4.3 Advantages of wide band gap semiconductors 4.4 SiC and GaN 4.4.1 Material properties 4.4.2 Material quality 4.4.3 SiC lateral devices: 4.4 .4 SiC vertical devices 4.4.5 GaN lateral devices 4.5 SiC device manufacturing 4.5.1 Bulk and epitaxial growth of SiC 4.5.1.1 Bulk growth 4.5.1.2 Epitaxial growth 4.5.1.3 Defects 4.5.2 Surface preparation and etching 4.5.3. 4.5 .4 Lithography 4.5.5 Ion implantation 4.5.6 Surface passivation 4.5.7 Metallization 4.6 GaN device manufacturing 4.6.1 GaN challenge 4.6.1.1 Cost 4.6.1.2 Reliability 4.6.1.3 Component packaging and thermal reliability 4.6. 1.4 Control 4.6.1.5 Device Modeling 4.7 Packaging Chapter 5 Company Profile
For more information about this report, please visit https://www.researchandmarkets.com/r/c040m9
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