Written by: David Manners November 25, 2014
Infineon is sampling the IGBT package, which can accommodate up to 120A IGBTs and full-rated diodes in the same footprint and pin output as the JEDEC standard TO-247-3. Mass production is planned for the first quarter of 2015.
TO-247PLUS can be used in industrial applications such as UPS, welding, solar energy, industrial drives, and automotive applications such as power system inverters to upgrade existing designs to obtain higher power output or improve thermal conditions in applications, thereby improving system reliability Sex and longevity.
The higher current capability of TO-247PLUS allows the number of parallel devices to be reduced, resulting in a more compact product design.
The package is designed for clamping or pressure mounting to a heat sink. Even under strong vibration and mechanical shock, these mounting techniques can ensure uniform pressure distribution on the package, better thermal conductivity and higher mechanical stability.
Since there are no mounting holes, the TO-247PLUS package can accommodate 70% larger silicon chip area than the standard TO-247.
Infineon said that compared with the standard TO-247, 26% of the thermal pad area helps to reduce the thermal resistance Rth (jh) by 20%.
The package body has "plastic pants", which can increase the creepage distance to 4.25mm-2mm larger than TO-247-3.
The plastic body compound of the TO-247PLUS package has a stricter clamping tolerance, and the new bonding wiring concept allows the DC collector current to be increased from 80A to 160A, which helps to improve the reliability and longer life of the IGBT.
Marked as: Diode IGBT Infineon
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